PART |
Description |
Maker |
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM (M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor RENESAS[Renesas Electronics Corporation]
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UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
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ID8155 8156H P8155 P8156 8155H D8156 D8155H-2B ID8 |
2048-Bit Static MOS RAM with I/O Ports and Timer 2048-Bit Static MOS RAM with I/O Ports and Timer 22 I/O, PIA-GENERAL PURPOSE, CDIP40 RESISTOR CER .30 OHM 3W RADIAL 2048位静态马鞍山内存与I / O端口和定时器 (ID8155 / ID8156) 2048-Bit Static MOS RAM with I/O Ports and Timer
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
|
M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM 131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions 8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8,192字8位高速CMOS静态RAM
|
http:// SONY[Sony Corporation]
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|
IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu... Fuji Electric Holdings Co., Ltd. ICSI[Integrated Circuit Solution Inc]
|
TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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